rf mosfet power transistor, 12ow, 28v 2 - 175 mhz du2812ov features l n-channel enhancement mode device l dmos structure l lower capacitances for broadband operation l high saturated output power l lower noise figure than competitive devices . . absolute maximum ratings at 25c electrical characteristics at 25c parameter drain-source breakdown voltage drain-source leakage current gate-source leakage current gate threshold voltage forwardtransconductance input capacitance output capacitance reverse capacitance power gain drain efficiency return loss load mismatch tolerance l * per side symbol min max units test conditions bv,,, 65 - v v,,=o.o v, l,s=30.0 ma? ?05s 6.0 ma v,,=28.0 v, v,,=o.o v? ?gss 6.0 pa v,,=20.0 v, v,,=o.o v? v gsfw 2.0 6.0 v v,,=lo.o v, 1,,=600.0 ma? gm 3.0 - s v,,=lo.o v, 1,,=6000.0 a, av,,=l .o v, 80 us pulse? c iss 270 pf v,,=28.0 v, f=l .o mhz? c oss 240 pf v,,=28.0 v, f=l .o mhz? c rss 48 pf v,,=28.0 v, f=l .o mhz? gp 13 - db v,,=28.0 v, i,,=600 ma, p,,,=120.0 w, f=175 mhz ?1d 60 - % v,,=28.0 v, i,,=600 ma, p,,fl20.0 w, f=l7.5 mhz 5 10 - % v,,=28.0 v, i,,=600 ma, p,,,=120.0 w, f=175 mhz vswr-t - 3o:l - v,,=28.0 v, i,,=600 ma, p,e120.0 w, f=175 mhz specifications subject to change without notke. mia-com, inc. north america: tel. (800) 366-2266 d asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
rf mosfet power transistor, 12ow, 28v du2812ov typical broadband performance curves 25 20 5 s z d 15 10 gain vs frequency v&z8 v i,,=600 ma p,,,=l20 w 70 efficiency vs frequency v,,=28 v i,,=600 ma p,,=l20 w 50 a 0 50 150 200 0 25 50 100 150 175 200 frequency (mhz) frequency (mhz) v2.00 power output vs power input 140 - i?,,=28 v i,,=600 ma 20 l i 0.1 0.2 0.3 1 2 3 4 5 6 7 6 9 power input(w) power output vs supply voltage f=175 mhz i,,=600 ma p,,=3.0 w i 29 25 30 33 supply voltage (v) specifications subject to change without notice. m/a-com, inc. north america: tel. (800) 366-2266 fax (800) 618-8883 n asia/pacific: tel. +81 (03) 3226-1671 fax +81 (03) 3226-1451 n europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
rf mosfet power transistor, 12ow, 28v du2812ov v2.00 typical device impedance frequency (mhz) ) z,,, (ohms) z loao (ohms) 30 3.0 -j 12.5 ) 8.0 +j 6.0 100 1.5 - j 8.5 7.0 + j 6.5 175 1.0 - j 6.0 6.5 + j 5.0 - ,. v,,=28 v, i,,=.600 ma, pous=120 watts z,, is the series equivalent input impedance of the device from gate to gate. z load is the optimum series equivalent load impedance as measured from drain to drain. rf test fixture parts list trimmer wpac!tor ucqf cmac~or o.wlpf tulhmer capacrror s-sgpf capacrror sspf capacltor sopf electrcls-tx c4mcror loow=so volts o.so?xo.lo?tfucs on mauocv.,25?x ?02s loop o.stxo.io?traceon soar0 7.5 turns of no. 20 awg copper wire x 0.31? resistor 13 ohms 2 watts reskror 10x onms so wm salun cores. 2 turns of so onm coaxtnru 2srackpole~.i522 41 tramformer 2 turns of 2 m onm coax tnru 2 stackpole 57.1s22 sawn cores ou2s1m? flu 0.082 specifications subject to change without notice. wa-com, inc. north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 = europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
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